All MOSFET. HM19N40 Datasheet

 

HM19N40 Datasheet and Replacement


   Type Designator: HM19N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 206 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO220AB
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HM19N40 Datasheet (PDF)

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HM19N40

General Description VDSS 400 V HM19N40, the silicon N-channel Enhanced ID 19 A PD (TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio

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History: HM2P10PR | AP9U18GH | HUF75343S3S | RJK0211DPA | BUK78150-55A | UTT220N03 | RJJ0315DPA

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