HM19N40 PDF and Equivalents Search

 

HM19N40 Specs and Replacement

Type Designator: HM19N40

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 206 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO220AB

HM19N40 substitution

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HM19N40 datasheet

 ..1. Size:439K  cn hmsemi
 hm19n40.pdf pdf_icon

HM19N40

General Description VDSS 400 V HM19N40, the silicon N-channel Enhanced ID 19 A PD (TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio... See More ⇒

Detailed specifications: HM18N03D, HM18N40, HM18N40A, HM18N40F, HM18N50A, HM18N50F, HM18P10, HM18P10K, CS150N03A8, HM1N50MR, HM1N60, HM1N60PR, HM1N60R, HM1P10MR, HM1P15MR, HM1P15PR, HM2015DN03Q

Keywords - HM19N40 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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