HM19N40 MOSFET. Datasheet pdf. Equivalent
Type Designator: HM19N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 19 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 42 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 206 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO220AB
HM19N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM19N40 Datasheet (PDF)
..1. Size:439K cn hmsemi
hm19n40.pdf
hm19n40.pdf
General Description VDSS 400 V HM19N40, the silicon N-channel Enhanced ID 19 A PD (TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio
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