HM1N50MR MOSFET. Datasheet pdf. Equivalent
Type Designator: HM1N50MR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 25 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
Package: SOT23
HM1N50MR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM1N50MR Datasheet (PDF)
..1. Size:2411K cn hmsemi
hm1n50mr.pdf
hm1n50mr.pdf
Silicon N-Channel Power MOSFET HM1N50MRGeneral Description VDSS 500 VHM1N50MR, the silicon N-channel EnhancedID 1.0 APD (TC=25) 3 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9.2which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching cir
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