HM1N50MR PDF and Equivalents Search

 

HM1N50MR Specs and Replacement

Type Designator: HM1N50MR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm

Package: SOT23

HM1N50MR substitution

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HM1N50MR datasheet

 ..1. Size:2411K  cn hmsemi
 hm1n50mr.pdf pdf_icon

HM1N50MR

Silicon N-Channel Power MOSFET HM1N50MR General Description VDSS 500 V HM1N50MR, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching cir... See More ⇒

Detailed specifications: HM18N40, HM18N40A, HM18N40F, HM18N50A, HM18N50F, HM18P10, HM18P10K, HM19N40, NCEP15T14, HM1N60, HM1N60PR, HM1N60R, HM1P10MR, HM1P15MR, HM1P15PR, HM2015DN03Q, HM2030Q

Keywords - HM1N50MR MOSFET specs

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