HM1P10MR Specs and Replacement
Type Designator: HM1P10MR
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.8 nS
Cossⓘ - Output Capacitance: 29 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: SOT23
HM1P10MR substitution
- MOSFET ⓘ Cross-Reference Search
HM1P10MR datasheet
hm1p10mr.pdf
HM1P10MR -100V P-Channel Enhancement Mode MOSFET Description The HM1P10MR uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-0.9 A DS D R ... See More ⇒
hm1p15mr.pdf
HM1P15MR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON ... See More ⇒
hm1p15pr.pdf
HM1P15PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON ... See More ⇒
Detailed specifications: HM18N50F, HM18P10, HM18P10K, HM19N40, HM1N50MR, HM1N60, HM1N60PR, HM1N60R, TK10A60D, HM1P15MR, HM1P15PR, HM2015DN03Q, HM2030Q, HM20N06, HM20N06IA, HM20N06KA, HM20N15
Keywords - HM1P10MR MOSFET specs
HM1P10MR cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IMZA65R072M1H | TPC6201
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