All MOSFET. HM1P10MR Datasheet

 

HM1P10MR Datasheet and Replacement


   Type Designator: HM1P10MR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: SOT23
 

 HM1P10MR substitution

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HM1P10MR Datasheet (PDF)

 ..1. Size:1001K  cn hmsemi
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HM1P10MR

HM1P10MR-100V P-Channel Enhancement Mode MOSFET Description The HM1P10MR uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-0.9 A DS DR

 9.1. Size:463K  cn hmsemi
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HM1P10MR

HM1P15MR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON

 9.2. Size:370K  cn hmsemi
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HM1P10MR

HM1P15PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON

Datasheet: HM18N50F , HM18P10 , HM18P10K , HM19N40 , HM1N50MR , HM1N60 , HM1N60PR , HM1N60R , TK10A60D , HM1P15MR , HM1P15PR , HM2015DN03Q , HM2030Q , HM20N06 , HM20N06IA , HM20N06KA , HM20N15 .

History: SVSP14N65FJDD2

Keywords - HM1P10MR MOSFET datasheet

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