HM1P10MR Datasheet and Replacement
Type Designator: HM1P10MR
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6.8 nS
Cossⓘ - Output Capacitance: 29 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: SOT23
HM1P10MR substitution
HM1P10MR Datasheet (PDF)
hm1p10mr.pdf
HM1P10MR-100V P-Channel Enhancement Mode MOSFET Description The HM1P10MR uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-0.9 A DS DR
hm1p15mr.pdf
HM1P15MR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON
hm1p15pr.pdf
HM1P15PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON
Datasheet: HM18N50F , HM18P10 , HM18P10K , HM19N40 , HM1N50MR , HM1N60 , HM1N60PR , HM1N60R , IRFZ24N , HM1P15MR , HM1P15PR , HM2015DN03Q , HM2030Q , HM20N06 , HM20N06IA , HM20N06KA , HM20N15 .
History: 2SK3109-S | TSD5N65M | HFD630 | CMP3006-VB | 8N65KL-TA3-T | APT60M75L2LLG | CHM9433JGP
Keywords - HM1P10MR MOSFET datasheet
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History: 2SK3109-S | TSD5N65M | HFD630 | CMP3006-VB | 8N65KL-TA3-T | APT60M75L2LLG | CHM9433JGP
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