HM2015DN03Q PDF and Equivalents Search

 

HM2015DN03Q Specs and Replacement

Type Designator: HM2015DN03Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: DFN3X3

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HM2015DN03Q datasheet

 ..1. Size:467K  cn hmsemi
 hm2015dn03q.pdf pdf_icon

HM2015DN03Q

HM2015DN03Q 30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET Description The HM2015DN03Q is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN3X3 package. The Q1 "High Side" MOSFET is desgined to minimze switching losses. The Schematic Diagram Q2"Lo... See More ⇒

Detailed specifications: HM19N40, HM1N50MR, HM1N60, HM1N60PR, HM1N60R, HM1P10MR, HM1P15MR, HM1P15PR, 4N60, HM2030Q, HM20N06, HM20N06IA, HM20N06KA, HM20N15, HM20N15A, HM20N15D, HM20N15K

Keywords - HM2015DN03Q MOSFET specs

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