FDMA6023PZT Datasheet and Replacement
Type Designator: FDMA6023PZT
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: MICROFET
FDMA6023PZT substitution
FDMA6023PZT Datasheet (PDF)
fdma6023pzt.pdf

June 2009FDMA6023PZTDual P-Channel PowerTrench MOSFET -20 V, -3.6 A, 60 mFeatures General Description Max rDS(on) = 60 m at VGS = -4.5 V, ID = -3.6 A This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other Max rDS(on) = 80 m at VGS = -2.5 V, ID = -3.0 Aultraportable applications. It features two in
fdma6676pz.pdf

February 2015FDMA6676PZSingle P-Channel PowerTrench MOSFET-30 V, -11 A, 13.5 mFeatures General DescriptionThis device is an ultra low resistance P-Channel FET. It is Max rDS(on) = 13.5 m @ VGS = -10 Vdesigned for power line load switching applications and reverse 25V VGS Extended Operating Ratingpolarity protection. It is especially optimized for voltage rails that c
Datasheet: FDMA410NZ , FDMA420NZ , FDMA430NZ , STS3401 , FDMA507PZ , FDMA510PZ , FDMA520PZ , FDMA530PZ , 4435 , FDMA7630 , STS3400 , FDMA7632 , STS3116E , FDMA7670 , STS2622A , FDMA7672 , STS2621 .
History: IXTE250N10 | STU16L01
Keywords - FDMA6023PZT MOSFET datasheet
FDMA6023PZT cross reference
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History: IXTE250N10 | STU16L01



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