FDMA6023PZT MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMA6023PZT
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 3.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: MICROFET
FDMA6023PZT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMA6023PZT Datasheet (PDF)
fdma6023pzt.pdf
June 2009FDMA6023PZTDual P-Channel PowerTrench MOSFET -20 V, -3.6 A, 60 mFeatures General Description Max rDS(on) = 60 m at VGS = -4.5 V, ID = -3.6 A This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other Max rDS(on) = 80 m at VGS = -2.5 V, ID = -3.0 Aultraportable applications. It features two in
fdma6676pz.pdf
February 2015FDMA6676PZSingle P-Channel PowerTrench MOSFET-30 V, -11 A, 13.5 mFeatures General DescriptionThis device is an ultra low resistance P-Channel FET. It is Max rDS(on) = 13.5 m @ VGS = -10 Vdesigned for power line load switching applications and reverse 25V VGS Extended Operating Ratingpolarity protection. It is especially optimized for voltage rails that c
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