All MOSFET. HM2030Q Datasheet

 

HM2030Q Datasheet and Replacement


   Type Designator: HM2030Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: DFN3X3
 

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HM2030Q Datasheet (PDF)

 ..1. Size:1363K  cn hmsemi
 hm2030q.pdf pdf_icon

HM2030Q

HM2030QDual N-Ch Fast Switching MOSFETs Product Summary Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 20V 5.8m 56A technology General Description DFN3x3 Pin Configuration The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provi

 8.1. Size:110K  chenmko
 chm2030jgp.pdf pdf_icon

HM2030Q

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM2030JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 20 Volts CURRENT 6 AmpereP-channel: VOLTAGE 20 Volts CURRENT 4.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low R

Datasheet: HM1N50MR , HM1N60 , HM1N60PR , HM1N60R , HM1P10MR , HM1P15MR , HM1P15PR , HM2015DN03Q , STF13NM60N , HM20N06 , HM20N06IA , HM20N06KA , HM20N15 , HM20N15A , HM20N15D , HM20N15K , HM20N15KA .

History: CEB6086 | AP60WN2K3H | CSD25302Q2

Keywords - HM2030Q MOSFET datasheet

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