All MOSFET. STS3116E Datasheet

 

STS3116E Datasheet and Replacement


   Type Designator: STS3116E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm
   Package: SOT23
 

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STS3116E Datasheet (PDF)

 ..1. Size:110K  samhop
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STS3116E

GreenProductSTS3116EaS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.94 @ VGS=10VSuface Mount Package.30V 2.6A 107 @ VGS=4.5V ESD Protected.139 @ VGS=2.5V D SOT23GDSGSABSOLUTE MAXIMUM RATINGS (TA=2

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Keywords - STS3116E MOSFET datasheet

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