STS3116E PDF and Equivalents Search

 

STS3116E Specs and Replacement

Type Designator: STS3116E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm

Package: SOT23

STS3116E substitution

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STS3116E datasheet

 ..1. Size:110K  samhop
sts3116e.pdf pdf_icon

STS3116E

Green Product STS3116E a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 94 @ VGS=10V Suface Mount Package. 30V 2.6A 107 @ VGS=4.5V ESD Protected. 139 @ VGS=2.5V D SOT23 G D S G S ABSOLUTE MAXIMUM RATINGS (TA=2... See More ⇒

Detailed specifications: FDMA507PZ , FDMA510PZ , FDMA520PZ , FDMA530PZ , FDMA6023PZT , FDMA7630 , STS3400 , FDMA7632 , IRF530 , FDMA7670 , STS2622A , FDMA7672 , STS2621 , FDMB3800N , STS2620A , FDMB3900AN , FDMB668P .

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