STS3116E Datasheet and Replacement
Type Designator: STS3116E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id| ⓘ - Maximum Drain Current: 2.6 A
Qg ⓘ - Total Gate Charge: 3.8 nC
Cossⓘ - Output Capacitance: 56 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm
Package: SOT23
STS3116E substitution
STS3116E Datasheet (PDF)
..1. Size:110K samhop
sts3116e.pdf
sts3116e.pdf
GreenProductSTS3116EaS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.94 @ VGS=10VSuface Mount Package.30V 2.6A 107 @ VGS=4.5V ESD Protected.139 @ VGS=2.5V D SOT23GDSGSABSOLUTE MAXIMUM RATINGS (TA=2
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