HM2328 Datasheet and Replacement
Type Designator: HM2328
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 29 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: SOT23
HM2328 substitution
HM2328 Datasheet (PDF)
hm2328.pdf
HM2328100V N Channel Enhancement Mode MOSFET 100 V N MOS VDS= 100V RDS(ON), Vgs@10V, Ids@1.0A = 270mRDS(ON), Vgs@4.5V, Ids@0.5A = 340mFeatures Advanced trench process technology High Density Cell Design For Ultra Low OnResistance Improved ShootThrough FOM
chm2321gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM2321GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)(3) 0.95
chm2323gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM2323GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.1 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
Datasheet: HM2312B , HM2314 , HM2314B , HM2318A , HM2318APR , HM2318B , HM2319 , HM2319A , IRF630 , HM2333 , HM2341 , HM2341B , HM2369 , HM24N20 , HM24N20K , HM24N20KA , HM24N50A .
Keywords - HM2328 MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: HM2319A | VBMB1311
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