HM2328
MOSFET. Datasheet pdf. Equivalent
Type Designator: HM2328
Marking Code: 2328
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 1.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.7
nC
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 29
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27
Ohm
Package:
SOT23
HM2328
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM2328
Datasheet (PDF)
..1. Size:540K cn hmsemi
hm2328.pdf
HM2328100V N Channel Enhancement Mode MOSFET 100 V N MOS VDS= 100V RDS(ON), Vgs@10V, Ids@1.0A = 270mRDS(ON), Vgs@4.5V, Ids@0.5A = 340mFeatures Advanced trench process technology High Density Cell Design For Ultra Low OnResistance Improved ShootThrough FOM
9.1. Size:218K chenmko
chm2321gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM2321GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)(3) 0.95
9.2. Size:84K chenmko
chm2323gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM2323GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.1 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
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