HM2328 Specs and Replacement
Type Designator: HM2328
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 29 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: SOT23
HM2328 substitution
- MOSFET ⓘ Cross-Reference Search
HM2328 datasheet
hm2328.pdf
HM2328 100V N Channel Enhancement Mode MOSFET 100 V N MOS VDS= 100V RDS(ON), Vgs@10V, Ids@1.0A = 270m RDS(ON), Vgs@4.5V, Ids@0.5A = 340m Features Advanced trench process technology High Density Cell Design For Ultra Low OnResistance Improved ShootThrough FOM ... See More ⇒
chm2321gp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM2321GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) (3) 0.95 ... See More ⇒
chm2323gp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM2323GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.1 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High sat... See More ⇒
Detailed specifications: HM2312B, HM2314, HM2314B, HM2318A, HM2318APR, HM2318B, HM2319, HM2319A, IRF630, HM2333, HM2341, HM2341B, HM2369, HM24N20, HM24N20K, HM24N20KA, HM24N50A
Keywords - HM2328 MOSFET specs
HM2328 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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