FDMB3800N Datasheet. Specs and Replacement

Type Designator: FDMB3800N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: MICROFET

FDMB3800N substitution

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FDMB3800N datasheet

 ..1. Size:321K  fairchild semi
 fdmb3800n.pdf pdf_icon

FDMB3800N

October 2006 FDMB3800N tm Dual N-Channel PowerTrench MOSFET 30V, 4.8A, 40m Features General Description Max rDS(on) = 40m at VGS = 10V, ID = 4.8A These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that Max rDS(on) = 51m at VGS = 4.5V, ID = 4.3A has been especially tailored to minimize the on-state resistance ... See More ⇒

 9.1. Size:265K  fairchild semi
 fdmb3900an.pdf pdf_icon

FDMB3800N

June 2013 FDMB3900AN Dual N-Channel PowerTrench MOSFET 25 V, 7.0 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7.0 A These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process Max rDS(on) = 33 m at VGS = 4.5 V, ID = 5.5 A that has been especially tailored to minimize the on-state Fast sw... See More ⇒

Detailed specifications: FDMA7630, STS3400, FDMA7632, STS3116E, FDMA7670, STS2622A, FDMA7672, STS2621, IRFP450, STS2620A, FDMB3900AN, FDMB668P, FDMC15N06, FDMC2512SDC, FDMC2514SDC, FDMC2523P, FDMC2610

Keywords - FDMB3800N MOSFET specs

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