All MOSFET. FDMB3800N Datasheet

 

FDMB3800N Datasheet and Replacement


   Type Designator: FDMB3800N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: MICROFET
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FDMB3800N Datasheet (PDF)

 ..1. Size:321K  fairchild semi
 fdmb3800n.pdf pdf_icon

FDMB3800N

October 2006FDMB3800NtmDual N-Channel PowerTrench MOSFET 30V, 4.8A, 40mFeatures General Description Max rDS(on) = 40m at VGS = 10V, ID = 4.8AThese N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that Max rDS(on) = 51m at VGS = 4.5V, ID = 4.3Ahas been especially tailored to minimize the on-state resistance

 9.1. Size:265K  fairchild semi
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FDMB3800N

June 2013FDMB3900ANDual N-Channel PowerTrench MOSFET 25 V, 7.0 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7.0 A These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 33 m at VGS = 4.5 V, ID = 5.5 Athat has been especially tailored to minimize the on-state Fast sw

Datasheet: FDMA7630 , STS3400 , FDMA7632 , STS3116E , FDMA7670 , STS2622A , FDMA7672 , STS2621 , IRFB3607 , STS2620A , FDMB3900AN , FDMB668P , FDMC15N06 , FDMC2512SDC , FDMC2514SDC , FDMC2523P , FDMC2610 .

History: IXTH160N075T | IRF7807 | WSF4022 | RQJ0304DQDQS | RQJ0602EGDQS | 7NM65G-TF3-T | SUP25P10-138

Keywords - FDMB3800N MOSFET datasheet

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