All MOSFET. HM26N18K Datasheet

 

HM26N18K Datasheet and Replacement


   Type Designator: HM26N18K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 185 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-252
 

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HM26N18K Datasheet (PDF)

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HM26N18K

HM26N18KN-Channel Enhancement Mode Power MOSFET Description The HM26N18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =185V,ID =26A RDS(ON)

Datasheet: HM25P03D , HM25P03K , HM25P03Q , HM25P04D , HM25P04K , HM25P15 , HM25P15D , HM25P15K , STP80NF70 , HM2800D , HM2803D , HM2807 , HM2807D , HM2809D , HM2809DR , HM2907 , HM2N10 .

History: RQA0008RXDQS | SVD50N06D | ME95N03T-G | AP2605GY | STD3NK60ZT4 | AONS34304C | IRF7473TR

Keywords - HM26N18K MOSFET datasheet

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