HM26N18K Datasheet and Replacement
Type Designator: HM26N18K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 185 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO-252
HM26N18K substitution
HM26N18K Datasheet (PDF)
hm26n18k.pdf

HM26N18KN-Channel Enhancement Mode Power MOSFET Description The HM26N18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =185V,ID =26A RDS(ON)
Datasheet: HM25P03D , HM25P03K , HM25P03Q , HM25P04D , HM25P04K , HM25P15 , HM25P15D , HM25P15K , AO4407 , HM2800D , HM2803D , HM2807 , HM2807D , HM2809D , HM2809DR , HM2907 , HM2N10 .
History: 2SK1446 | SVF2N60CNF | BUK9624-55A
Keywords - HM26N18K MOSFET datasheet
HM26N18K cross reference
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History: 2SK1446 | SVF2N60CNF | BUK9624-55A



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