HM26N18K Specs and Replacement

Type Designator: HM26N18K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 185 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO-252

HM26N18K substitution

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HM26N18K datasheet

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HM26N18K

HM26N18K N-Channel Enhancement Mode Power MOSFET Description The HM26N18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =185V,ID =26A RDS(ON) ... See More ⇒

Detailed specifications: HM25P03D, HM25P03K, HM25P03Q, HM25P04D, HM25P04K, HM25P15, HM25P15D, HM25P15K, IRF530, HM2800D, HM2803D, HM2807, HM2807D, HM2809D, HM2809DR, HM2907, HM2N10

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