HM2809DR Specs and Replacement

Type Designator: HM2809DR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Electrical Characteristics

tr ⓘ - Rise Time: 33.1 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.188 Ohm

Package: DFN2X2

HM2809DR substitution

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HM2809DR datasheet

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HM2809DR

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HM2809DR

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HM2809DR

HM2807 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON) ... See More ⇒

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HM2809DR

HM2800D N-Channel Enhancement Mode Power MOSFET Description The HM2800D uses advanced trench technology to provide D2 D1 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. G2 G1 S2 S1 General Features Schematic diagram VDS = 20V,ID = 5.0A RDS(O... See More ⇒

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Detailed specifications: HM25P15D, HM25P15K, HM26N18K, HM2800D, HM2803D, HM2807, HM2807D, HM2809D, TK10A60D, HM2907, HM2N10, HM2N10B, HM2N10MR, HM2N15PR, HM2N15R, HM2N20, HM2N20MR

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.