All MOSFET. HM2809DR Datasheet

 

HM2809DR MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM2809DR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Qgⓘ - Total Gate Charge: 6.3 nC
   trⓘ - Rise Time: 33.1 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.188 Ohm
   Package: DFN2X2

 HM2809DR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM2809DR Datasheet (PDF)

 ..1. Size:1575K  cn hmsemi
 hm2809dr.pdf

HM2809DR HM2809DR

HM2809DR P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)188m@VGS=-10V The HM2809DR is the P-Channel logic enhancement mode power RDS(ON)266m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

 7.1. Size:1619K  cn hmsemi
 hm2809d.pdf

HM2809DR HM2809DR

HM2809D P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)188m@VGS=-10V The HM2809D is the P-Channel logic enhancement mode power RDS(ON)266m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

 9.1. Size:505K  cn hmsemi
 hm2807.pdf

HM2809DR HM2809DR

HM2807 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON)

 9.2. Size:1154K  cn hmsemi
 hm2800d.pdf

HM2809DR HM2809DR

HM2800DN-Channel Enhancement Mode Power MOSFET Description The HM2800D uses advanced trench technology to provide D2D1excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. G2G1S2S1General Features Schematic diagram VDS = 20V,ID = 5.0A RDS(O

 9.3. Size:907K  cn hmsemi
 hm2803d.pdf

HM2809DR HM2809DR

HM2803DDual P-Channel Enhancement Mode Power MOSFET Description The HM2803D uses advanced trench technology to provide D2D1excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G2G1S2S1General Features Schematic diagram VDS = -20V,ID = -5.0A RDS(ON)

 9.4. Size:544K  cn hmsemi
 hm2807d.pdf

HM2809DR HM2809DR

HM2807D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP10TN003R

 

 
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