HM2907 Specs and Replacement
Type Designator: HM2907
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 180 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO-220
HM2907 substitution
- MOSFET ⓘ Cross-Reference Search
HM2907 datasheet
hm2907.pdf
Pin Description Features VDSS=80V VGSS= 25V ID=180A RDS(ON)=4.5m (max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter S... See More ⇒
hm2907a.pdf
Spec. No. HE9520 HI-SINCERITY Issued Date 1997.06.18 Revised Date 2007.04.17 MICROELECTRONICS CORP. Page No. 1/4 HM2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HM2907A is designed for general purpose amplifier and high speed, medium-power switching applications. SOT-89 Features Low collector saturation voltage High speed switching For co... See More ⇒
Detailed specifications: HM25P15K, HM26N18K, HM2800D, HM2803D, HM2807, HM2807D, HM2809D, HM2809DR, AO4407, HM2N10, HM2N10B, HM2N10MR, HM2N15PR, HM2N15R, HM2N20, HM2N20MR, HM2N20PR
Keywords - HM2907 MOSFET specs
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