HM2907 Datasheet and Replacement
Type Designator: HM2907
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 180 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO-220
HM2907 substitution
HM2907 Datasheet (PDF)
hm2907.pdf

Pin Description Features VDSS=80VVGSS=25VID=180A RDS(ON)=4.5m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter S
hm2907a.pdf

Spec. No. :HE9520 HI-SINCERITY Issued Date : 1997.06.18 Revised Date : 2007.04.17 MICROELECTRONICS CORP. Page No. : 1/4 HM2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HM2907A is designed for general purpose amplifier and high speed, medium-power switching applications. SOT-89 Features Low collector saturation voltage High speed switching For co
Datasheet: HM25P15K , HM26N18K , HM2800D , HM2803D , HM2807 , HM2807D , HM2809D , HM2809DR , P60NF06 , HM2N10 , HM2N10B , HM2N10MR , HM2N15PR , HM2N15R , HM2N20 , HM2N20MR , HM2N20PR .
History: RQ3E070BN | OSG60R099KT3F | SWP100R10VT | OSG65R099HT3ZF | RUQ050N02FRA | IPD230N06NG | DH400P06F
Keywords - HM2907 MOSFET datasheet
HM2907 cross reference
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History: RQ3E070BN | OSG60R099KT3F | SWP100R10VT | OSG65R099HT3ZF | RUQ050N02FRA | IPD230N06NG | DH400P06F



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