All MOSFET. FDMB3900AN Datasheet

 

FDMB3900AN Datasheet and Replacement


   Type Designator: FDMB3900AN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: MICROFET
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FDMB3900AN Datasheet (PDF)

 ..1. Size:265K  fairchild semi
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FDMB3900AN

June 2013FDMB3900ANDual N-Channel PowerTrench MOSFET 25 V, 7.0 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7.0 A These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 33 m at VGS = 4.5 V, ID = 5.5 Athat has been especially tailored to minimize the on-state Fast sw

 9.1. Size:321K  fairchild semi
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FDMB3900AN

October 2006FDMB3800NtmDual N-Channel PowerTrench MOSFET 30V, 4.8A, 40mFeatures General Description Max rDS(on) = 40m at VGS = 10V, ID = 4.8AThese N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that Max rDS(on) = 51m at VGS = 4.5V, ID = 4.3Ahas been especially tailored to minimize the on-state resistance

Datasheet: FDMA7632 , STS3116E , FDMA7670 , STS2622A , FDMA7672 , STS2621 , FDMB3800N , STS2620A , P0903BDG , FDMB668P , FDMC15N06 , FDMC2512SDC , FDMC2514SDC , FDMC2523P , FDMC2610 , STS2620 , FDMC2674 .

History: AP3P6R0S | NCE60N1K0K | STD4NK60ZT4 | WMS12P03T1 | AP30N30W | 2SK2845 | 2SJ164

Keywords - FDMB3900AN MOSFET datasheet

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