HM2N70 Datasheet and Replacement
Type Designator: HM2N70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
Package: TO220F TO251 TO252
HM2N70 substitution
HM2N70 Datasheet (PDF)
hm2n70.pdf

N- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFET N- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFETRoHSRoHS RoHSRoHSFEATURESFEATURESFEATURES LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMP
hm2n70r.pdf

H General Description VDSS 700 V HM2N70R, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a
Datasheet: HM2N15R , HM2N20 , HM2N20MR , HM2N20PR , HM2N20R , HM2N25 , HM2N60 , HM2N65R , CS150N03A8 , HM2N70R , HM2P10PR , HM2P10R , HM3018 , HM3018JR , HM3018KR , HM3018SR , HM30N02D .
History: STD5NK40ZT4 | DHB16N06 | AP60SL650AFI | BLP04N10-P | AUIRFIZ44N | IPD038N04NG | SM140R50CT1TL
Keywords - HM2N70 MOSFET datasheet
HM2N70 cross reference
HM2N70 equivalent finder
HM2N70 lookup
HM2N70 substitution
HM2N70 replacement
History: STD5NK40ZT4 | DHB16N06 | AP60SL650AFI | BLP04N10-P | AUIRFIZ44N | IPD038N04NG | SM140R50CT1TL



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