All MOSFET. HM2N70 Datasheet

 

HM2N70 Datasheet and Replacement


   Type Designator: HM2N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.5 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: TO220F TO251 TO252
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HM2N70 Datasheet (PDF)

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HM2N70

N- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFET N- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFETRoHSRoHS RoHSRoHSFEATURESFEATURESFEATURES LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMP

 0.1. Size:683K  cn hmsemi
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HM2N70

H General Description VDSS 700 V HM2N70R, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: RJK0331DPB-00

Keywords - HM2N70 MOSFET datasheet

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