HM2N70 Specs and Replacement

Type Designator: HM2N70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm

Package: TO220F TO251 TO252

HM2N70 substitution

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HM2N70 datasheet

 ..1. Size:396K  cn hmsemi
 hm2n70.pdf pdf_icon

HM2N70

N- MOS / N-CHANNEL POWER MOSFET N- MOS / N-CHANNEL POWER MOSFET N- MOS / N-CHANNEL POWER MOSFET N- MOS / N-CHANNEL POWER MOSFET RoHS RoHS RoHS RoHS FEATURES FEATURES FEATURES LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMP... See More ⇒

 0.1. Size:683K  cn hmsemi
 hm2n70r.pdf pdf_icon

HM2N70

H General Description VDSS 700 V HM2N70R, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a... See More ⇒

Detailed specifications: HM2N15R, HM2N20, HM2N20MR, HM2N20PR, HM2N20R, HM2N25, HM2N60, HM2N65R, IRF520, HM2N70R, HM2P10PR, HM2P10R, HM3018, HM3018JR, HM3018KR, HM3018SR, HM30N02D

Keywords - HM2N70 MOSFET specs

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