All MOSFET. HM2N70R Datasheet

 

HM2N70R MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM2N70R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: SOT223

 HM2N70R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM2N70R Datasheet (PDF)

 ..1. Size:683K  cn hmsemi
 hm2n70r.pdf

HM2N70R HM2N70R

H General Description VDSS 700 V HM2N70R, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a

 8.1. Size:396K  cn hmsemi
 hm2n70.pdf

HM2N70R HM2N70R

N- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFET N- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFETRoHSRoHS RoHSRoHSFEATURESFEATURESFEATURES LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMP

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