All MOSFET. HM2P10PR Datasheet

 

HM2P10PR MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM2P10PR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT89

 HM2P10PR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM2P10PR Datasheet (PDF)

 ..1. Size:334K  cn hmsemi
 hm2p10pr.pdf

HM2P10PR HM2P10PR

HM2P10PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDS(Typ.)

 8.1. Size:595K  cn hmsemi
 hm2p10r.pdf

HM2P10PR HM2P10PR

HM2P10R Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDS(Typ.)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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