HM2P10PR Specs and Replacement

Type Designator: HM2P10PR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SOT89

HM2P10PR substitution

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HM2P10PR datasheet

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HM2P10PR

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HM2P10PR

HM2P10R Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDS(Typ.) ... See More ⇒

Detailed specifications: HM2N20MR, HM2N20PR, HM2N20R, HM2N25, HM2N60, HM2N65R, HM2N70, HM2N70R, STF13NM60N, HM2P10R, HM3018, HM3018JR, HM3018KR, HM3018SR, HM30N02D, HM30N02K, HM30N02Q

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.