FDMB668P Datasheet. Specs and Replacement

Type Designator: FDMB668P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: MICROFET

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FDMB668P datasheet

 ..1. Size:439K  fairchild semi
 fdmb668p.pdf pdf_icon

FDMB668P

February 2007 FDMB668P tm P-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35m Features General Description FDMB668P is excellent for load switch and DC-DC conversion Max rDS(on) = 35m at VGS = -4.5V, ID = -6.1A among portable electronics. It achieves an optimal balance Max rDS(on) = 50m at VGS = -2.5V, ID = -5.1A among efficiency, thermal transfer and small... See More ⇒

Detailed specifications: STS3116E, FDMA7670, STS2622A, FDMA7672, STS2621, FDMB3800N, STS2620A, FDMB3900AN, BS170, FDMC15N06, FDMC2512SDC, FDMC2514SDC, FDMC2523P, FDMC2610, STS2620, FDMC2674, FDMC3020DC

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