All MOSFET. FDMB668P Datasheet

 

FDMB668P Datasheet and Replacement


   Type Designator: FDMB668P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 6.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: MICROFET
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FDMB668P Datasheet (PDF)

 ..1. Size:439K  fairchild semi
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FDMB668P

February 2007FDMB668PtmP-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35mFeatures General DescriptionFDMB668P is excellent for load switch and DC-DC conversion Max rDS(on) = 35m at VGS = -4.5V, ID = -6.1Aamong portable electronics. It achieves an optimal balance Max rDS(on) = 50m at VGS = -2.5V, ID = -5.1A among efficiency, thermal transfer and small

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History: BUZ171 | IRFZ48RS | F5021H | CSD18542KCS | WSD30L30DN | HGK210N20S | IPI47N10S-33

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