FDMB668P Datasheet and Replacement
Type Designator: FDMB668P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 6.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 42 nC
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: MICROFET
FDMB668P substitution
FDMB668P Datasheet (PDF)
fdmb668p.pdf

February 2007FDMB668PtmP-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35mFeatures General DescriptionFDMB668P is excellent for load switch and DC-DC conversion Max rDS(on) = 35m at VGS = -4.5V, ID = -6.1Aamong portable electronics. It achieves an optimal balance Max rDS(on) = 50m at VGS = -2.5V, ID = -5.1A among efficiency, thermal transfer and small
Datasheet: STS3116E , FDMA7670 , STS2622A , FDMA7672 , STS2621 , FDMB3800N , STS2620A , FDMB3900AN , 18N50 , FDMC15N06 , FDMC2512SDC , FDMC2514SDC , FDMC2523P , FDMC2610 , STS2620 , FDMC2674 , FDMC3020DC .
History: CM4N60F
Keywords - FDMB668P MOSFET datasheet
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History: CM4N60F



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