FDMC15N06 Datasheet and Replacement
Type Designator: FDMC15N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: POWER33
FDMC15N06 substitution
FDMC15N06 Datasheet (PDF)
fdmc15n06.pdf

July 2009FDMC15N06N-Channel MOSFET 55V, 15A, 0.090Features Description RDS(on) = 0.075 ( Typ.)@ VGS = 10V, ID = 15A These N-Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology 100% Avalanche Testedachieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.This device
Datasheet: FDMA7670 , STS2622A , FDMA7672 , STS2621 , FDMB3800N , STS2620A , FDMB3900AN , FDMB668P , 10N65 , FDMC2512SDC , FDMC2514SDC , FDMC2523P , FDMC2610 , STS2620 , FDMC2674 , FDMC3020DC , STS2601 .
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