FDMC15N06 Datasheet and Replacement
Type Designator: FDMC15N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: POWER33
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FDMC15N06 Datasheet (PDF)
fdmc15n06.pdf

July 2009FDMC15N06N-Channel MOSFET 55V, 15A, 0.090Features Description RDS(on) = 0.075 ( Typ.)@ VGS = 10V, ID = 15A These N-Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology 100% Avalanche Testedachieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.This device
Datasheet: FDMA7670 , STS2622A , FDMA7672 , STS2621 , FDMB3800N , STS2620A , FDMB3900AN , FDMB668P , 13N50 , FDMC2512SDC , FDMC2514SDC , FDMC2523P , FDMC2610 , STS2620 , FDMC2674 , FDMC3020DC , STS2601 .
History: 2SK3354-ZJ | SFS130N06GF | STD4NK60ZT4 | 2SK3510-Z | AP30N30W | 2SK2845 | R5019ANJ
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History: 2SK3354-ZJ | SFS130N06GF | STD4NK60ZT4 | 2SK3510-Z | AP30N30W | 2SK2845 | R5019ANJ



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