HM32N20F Specs and Replacement

Type Designator: HM32N20F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO220F

HM32N20F substitution

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HM32N20F datasheet

 ..1. Size:3392K  cn hmsemi
 hm32n20 hm32n20f.pdf pdf_icon

HM32N20F

/ 200V N-Channel MOSFET General Description Features This Power MOSFET is produced using True semi s - 32A, 200V, RDS(on) typ. = 0.080 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 50 nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superior switching - Fast switching ... See More ⇒

Detailed specifications: HM3205B, HM3205D, HM3207, HM3207B, HM3207BD, HM3207D, HM3207T, HM32N20, IRF3205, HM3305, HM3305D, HM3306, HM3307, HM3307A, HM3307B, HM3400, HM3400B

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