All MOSFET. HM32N20F Datasheet

 

HM32N20F Datasheet and Replacement


   Type Designator: HM32N20F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220F
 

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HM32N20F Datasheet (PDF)

 ..1. Size:3392K  cn hmsemi
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HM32N20F

/ 200V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using True semis - 32A, 200V, RDS(on) typ. = 0.080@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 50 nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior switching - Fast switching

Datasheet: HM3205B , HM3205D , HM3207 , HM3207B , HM3207BD , HM3207D , HM3207T , HM32N20 , IRF3205 , HM3305 , HM3305D , HM3306 , HM3307 , HM3307A , HM3307B , HM3400 , HM3400B .

History: IRF3711ZS | CTD06N7P5 | NCE65NF068LL | AP9976GP | IXTH3N100P | BLP038N10GL-D | RSM5853P

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