HM3710K Specs and Replacement

Type Designator: HM3710K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO252

HM3710K substitution

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HM3710K datasheet

 ..1. Size:778K  cn hmsemi
 hm3710k.pdf pdf_icon

HM3710K

HM3710K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3710K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =57A RDS(ON) ... See More ⇒

 8.1. Size:575K  cn hmsemi
 hm3710.pdf pdf_icon

HM3710K

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =57A RDS(ON) ... See More ⇒

Detailed specifications: HM3426B, HM35N03D, HM35N03Q, HM35P03, HM35P03D, HM35P03K, HM35P04D, HM3710, 4435, HM3800D, HM3808, HM3N10MR, HM3N10PR, HM3N120A, HM3N120F, HM3N150A, HM3N150F

Keywords - HM3710K MOSFET specs

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