All MOSFET. HM3800D Datasheet

 

HM3800D MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM3800D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 6.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 5.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 99 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: DFN2X2-6L

 HM3800D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM3800D Datasheet (PDF)

 ..1. Size:873K  cn hmsemi
 hm3800d.pdf

HM3800D HM3800D

HM3800DN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3800D uses advanced trench technology to provide D2D1excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G2G1S2S1GENERAL FEATURES Schematic diagram VDS = 30V,ID = 5.8A RDS

 9.1. Size:1252K  cn hmsemi
 hm3808.pdf

HM3800D HM3800D

Pin Description Features VDSS=80VVGSS=25VID=150A RDS(ON)=5m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter Syst

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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