HM3808 Specs and Replacement

Type Designator: HM3808

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 150 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO220

HM3808 substitution

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HM3808 datasheet

 ..1. Size:1252K  cn hmsemi
 hm3808.pdf pdf_icon

HM3808

Pin Description Features VDSS=80V VGSS= 25V ID=150A RDS(ON)=5m (max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter Syst... See More ⇒

 9.1. Size:873K  cn hmsemi
 hm3800d.pdf pdf_icon

HM3808

HM3800D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3800D uses advanced trench technology to provide D2 D1 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G2 G1 S2 S1 GENERAL FEATURES Schematic diagram VDS = 30V,ID = 5.8A RDS... See More ⇒

Detailed specifications: HM35N03Q, HM35P03, HM35P03D, HM35P03K, HM35P04D, HM3710, HM3710K, HM3800D, SKD502T, HM3N10MR, HM3N10PR, HM3N120A, HM3N120F, HM3N150A, HM3N150F, HM3N25I, HM3N30PR

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs