All MOSFET. HM3808 Datasheet

 

HM3808 Datasheet and Replacement


   Type Designator: HM3808
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO220
 

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HM3808 Datasheet (PDF)

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HM3808

Pin Description Features VDSS=80VVGSS=25VID=150A RDS(ON)=5m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter Syst

 9.1. Size:873K  cn hmsemi
 hm3800d.pdf pdf_icon

HM3808

HM3800DN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3800D uses advanced trench technology to provide D2D1excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G2G1S2S1GENERAL FEATURES Schematic diagram VDS = 30V,ID = 5.8A RDS

Datasheet: HM35N03Q , HM35P03 , HM35P03D , HM35P03K , HM35P04D , HM3710 , HM3710K , HM3800D , IRF9540N , HM3N10MR , HM3N10PR , HM3N120A , HM3N120F , HM3N150A , HM3N150F , HM3N25I , HM3N30PR .

History: CEM0215 | 14N50L-TA3-T | 14N50G-TF1-T | CEM9436A | CEN2321A | BRCS120P012MC | IXFT23N80Q

Keywords - HM3808 MOSFET datasheet

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