HM3808 MOSFET. Datasheet pdf. Equivalent
Type Designator: HM3808
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 150 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO220
HM3808 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM3808 Datasheet (PDF)
hm3808.pdf
Pin Description Features VDSS=80VVGSS=25VID=150A RDS(ON)=5m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter Syst
hm3800d.pdf
HM3800DN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3800D uses advanced trench technology to provide D2D1excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G2G1S2S1GENERAL FEATURES Schematic diagram VDS = 30V,ID = 5.8A RDS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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