All MOSFET. HM3N30PR Datasheet

 

HM3N30PR Datasheet and Replacement


   Type Designator: HM3N30PR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
   Package: SOT89
 

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HM3N30PR Datasheet (PDF)

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HM3N30PR

HM3N30PR Silicon N-Channel Power MOSFETGeneral Description VDSS 300 V HM3N30PR, the silicon N-channel Enhanced ID 3 A PD (TC=25) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching ci

Datasheet: HM3808 , HM3N10MR , HM3N10PR , HM3N120A , HM3N120F , HM3N150A , HM3N150F , HM3N25I , IRLZ44N , HM3N40PR , HM3N40R , HM3N70 , HM3N80 , HM3N90F , HM3N90I , HM3P10MR , HM4030 .

History: PDN3909S

Keywords - HM3N30PR MOSFET datasheet

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