HM3N30PR Specs and Replacement

Type Designator: HM3N30PR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm

Package: SOT89

HM3N30PR substitution

- MOSFET ⓘ Cross-Reference Search

 

HM3N30PR datasheet

 ..1. Size:1791K  cn hmsemi
 hm3n30pr.pdf pdf_icon

HM3N30PR

HM3N30PR Silicon N-Channel Power MOSFET General Description VDSS 300 V HM3N30PR, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching ci... See More ⇒

Detailed specifications: HM3808, HM3N10MR, HM3N10PR, HM3N120A, HM3N120F, HM3N150A, HM3N150F, HM3N25I, AON6380, HM3N40PR, HM3N40R, HM3N70, HM3N80, HM3N90F, HM3N90I, HM3P10MR, HM4030

Keywords - HM3N30PR MOSFET specs

 HM3N30PR cross reference

 HM3N30PR equivalent finder

 HM3N30PR pdf lookup

 HM3N30PR substitution

 HM3N30PR replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs