HM3N70 Specs and Replacement

Type Designator: HM3N70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 17.5 nC

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO251 TO252

HM3N70 substitution

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HM3N70 datasheet

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HM3N70

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Detailed specifications: HM3N120A, HM3N120F, HM3N150A, HM3N150F, HM3N25I, HM3N30PR, HM3N40PR, HM3N40R, NCEP15T14, HM3N80, HM3N90F, HM3N90I, HM3P10MR, HM4030, HM4030D, HM40N04D, HM40N04K

Keywords - HM3N70 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.