All MOSFET. HM3N80 Datasheet

 

HM3N80 Datasheet and Replacement


   Type Designator: HM3N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 18 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO220AB
 

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HM3N80 Datasheet (PDF)

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HM3N80

HM3N80 Si l i con N- Channel Power MOSFETGeneral Description VDSS 800 V HM3N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching c

Datasheet: HM3N120F , HM3N150A , HM3N150F , HM3N25I , HM3N30PR , HM3N40PR , HM3N40R , HM3N70 , IRFP250 , HM3N90F , HM3N90I , HM3P10MR , HM4030 , HM4030D , HM40N04D , HM40N04K , HM40N06D .

History: IPD122N10N3 | UPA1716G | IRFS4310Z | HM4447 | 2SK1488 | IRLR8103VTR

Keywords - HM3N80 MOSFET datasheet

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