HM3N80 Datasheet and Replacement
Type Designator: HM3N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO220AB
HM3N80 substitution
HM3N80 Datasheet (PDF)
hm3n80.pdf

HM3N80 Si l i con N- Channel Power MOSFETGeneral Description VDSS 800 V HM3N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching c
Datasheet: HM3N120F , HM3N150A , HM3N150F , HM3N25I , HM3N30PR , HM3N40PR , HM3N40R , HM3N70 , IRFP250 , HM3N90F , HM3N90I , HM3P10MR , HM4030 , HM4030D , HM40N04D , HM40N04K , HM40N06D .
History: JSM2050 | SML3525AN | KHB4D0N65P
Keywords - HM3N80 MOSFET datasheet
HM3N80 cross reference
HM3N80 equivalent finder
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HM3N80 replacement
History: JSM2050 | SML3525AN | KHB4D0N65P



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