HM3N80 Specs and Replacement

Type Designator: HM3N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: TO220AB

HM3N80 substitution

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HM3N80 datasheet

 ..1. Size:950K  cn hmsemi
 hm3n80.pdf pdf_icon

HM3N80

HM3N80 Si l i con N- Channel Power MOSFET General Description VDSS 800 V HM3N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25 ) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching c... See More ⇒

Detailed specifications: HM3N120F, HM3N150A, HM3N150F, HM3N25I, HM3N30PR, HM3N40PR, HM3N40R, HM3N70, AON7506, HM3N90F, HM3N90I, HM3P10MR, HM4030, HM4030D, HM40N04D, HM40N04K, HM40N06D

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