All MOSFET. HM3N90F Datasheet

 

HM3N90F Datasheet and Replacement


   Type Designator: HM3N90F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: TO220F
 

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HM3N90F Datasheet (PDF)

 ..1. Size:951K  cn hmsemi
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HM3N90F

HM3N90FSilicon N-Channel Power MOSFET General Description VDSS 900 V HM3N90F, the silicon N-channel Enhanced VDMOSFET, ID 3 A PD(TC=25) 30 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 4.7 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit

 8.1. Size:914K  cn hmsemi
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HM3N90F

HM3N90ISilicon N-Channel Power MOSFET General Description VDSS 900 VHM3N90I, the silicon N-channel EnhancedID 3 APD(TC=25) 75 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for

Datasheet: HM3N150A , HM3N150F , HM3N25I , HM3N30PR , HM3N40PR , HM3N40R , HM3N70 , HM3N80 , STP80NF70 , HM3N90I , HM3P10MR , HM4030 , HM4030D , HM40N04D , HM40N04K , HM40N06D , HM40N10 .

History: TPU60R580C | TPA60R350C

Keywords - HM3N90F MOSFET datasheet

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