HM3N90F Specs and Replacement

Type Designator: HM3N90F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm

Package: TO220F

HM3N90F substitution

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HM3N90F datasheet

 ..1. Size:951K  cn hmsemi
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HM3N90F

HM3N90F Silicon N-Channel Power MOSFET General Description VDSS 900 V HM3N90F, the silicon N-channel Enhanced VDMOSFET, ID 3 A PD(TC=25 ) 30 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 4.7 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit... See More ⇒

 8.1. Size:914K  cn hmsemi
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HM3N90F

HM3N90I Silicon N-Channel Power MOSFET General Description VDSS 900 V HM3N90I, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for ... See More ⇒

Detailed specifications: HM3N150A, HM3N150F, HM3N25I, HM3N30PR, HM3N40PR, HM3N40R, HM3N70, HM3N80, STP80NF70, HM3N90I, HM3P10MR, HM4030, HM4030D, HM40N04D, HM40N04K, HM40N06D, HM40N10

Keywords - HM3N90F MOSFET specs

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