HM3P10MR Specs and Replacement

Type Designator: HM3P10MR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.8 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: SOT23

HM3P10MR substitution

- MOSFET ⓘ Cross-Reference Search

 

HM3P10MR datasheet

 ..1. Size:1201K  cn hmsemi
 hm3p10mr.pdf pdf_icon

HM3P10MR

HM3P10MR -100V P-Channel Enhancement Mode MOSFET Description The HM3P10MR uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-3.0 A DS D R ... See More ⇒

Detailed specifications: HM3N25I, HM3N30PR, HM3N40PR, HM3N40R, HM3N70, HM3N80, HM3N90F, HM3N90I, TK10A60D, HM4030, HM4030D, HM40N04D, HM40N04K, HM40N06D, HM40N10, HM40N10K, HM40N10KA

Keywords - HM3P10MR MOSFET specs

 HM3P10MR cross reference

 HM3P10MR equivalent finder

 HM3P10MR pdf lookup

 HM3P10MR substitution

 HM3P10MR replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.