All MOSFET. HM3P10MR Datasheet

 

HM3P10MR MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM3P10MR
   Marking Code: 3P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5(typ) V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.5 nC
   trⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: SOT23

 HM3P10MR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM3P10MR Datasheet (PDF)

 ..1. Size:1201K  cn hmsemi
 hm3p10mr.pdf

HM3P10MR HM3P10MR

HM3P10MR-100V P-Channel Enhancement Mode MOSFET Description The HM3P10MR uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-3.0 A DS DR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top