All MOSFET. HM3P10MR Datasheet

 

HM3P10MR Datasheet and Replacement


   Type Designator: HM3P10MR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: SOT23
 

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HM3P10MR Datasheet (PDF)

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HM3P10MR

HM3P10MR-100V P-Channel Enhancement Mode MOSFET Description The HM3P10MR uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-3.0 A DS DR

Datasheet: HM3N25I , HM3N30PR , HM3N40PR , HM3N40R , HM3N70 , HM3N80 , HM3N90F , HM3N90I , IRFZ24N , HM4030 , HM4030D , HM40N04D , HM40N04K , HM40N06D , HM40N10 , HM40N10K , HM40N10KA .

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