HM40P06K Specs and Replacement
Type Designator: HM40P06K
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 450 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO252
HM40P06K substitution
- MOSFET ⓘ Cross-Reference Search
HM40P06K datasheet
hm40p06k.pdf
HM40P06K P-Channel Enhancement Mode Power MOSFET Description The HM40P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-40A RDS(ON) ... See More ⇒
hm40p04k.pdf
HM40P04K P-Channel Enhancement Mode Power MOSFET Description The HM40P04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features Schematic diagram VDS =-40V,ID =-40A RDS(ON) ... See More ⇒
Detailed specifications: HM40N10 , HM40N10K , HM40N10KA , HM40N15K , HM40N15KA , HM40N20 , HM40N20D , HM40P04K , IRF520 , HM4110 , HM4110T , HM4240 , HM4260 , HM4264 , HM4264B , HM4302 , HM4302B .
Keywords - HM40P06K MOSFET specs
HM40P06K cross reference
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