All MOSFET. HM4110 Datasheet

 

HM4110 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM4110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 170 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO220

 HM4110 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM4110 Datasheet (PDF)

 ..1. Size:732K  cn hmsemi
 hm4110.pdf

HM4110 HM4110

100VDS25VGS170A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS= 0VVGSS=25VID=1 0A RDS(ON)=5 m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Manage

 0.1. Size:556K  cn hmsemi
 hm4110t.pdf

HM4110 HM4110

HM4110TN-Channel Enhancement Mode Power MOSFET Description The HM4110T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features VDSS =100V,ID =210A RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top