All MOSFET. HM4240 Datasheet

 

HM4240 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM4240
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
   Package: SOP8

 HM4240 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM4240 Datasheet (PDF)

 ..1. Size:878K  cn hmsemi
 hm4240.pdf

HM4240 HM4240

HM4240N-Channel Enhancement Mode Power MOSFET Description The HM4240 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =20A RDS(ON)

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