HM4240 MOSFET. Datasheet pdf. Equivalent
Type Designator: HM4240
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 50 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 750 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0066 Ohm
Package: SOP8
HM4240 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM4240 Datasheet (PDF)
..1. hm4240.pdf Size:878K _cn_hmsemi
HM4240N-Channel Enhancement Mode Power MOSFET Description The HM4240 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =20A RDS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF1405 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .



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