All MOSFET. HCA60R150T Datasheet

 

HCA60R150T MOSFET. Datasheet pdf. Equivalent


   Type Designator: HCA60R150T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 41 nC
   trⓘ - Rise Time: 108 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO247

 HCA60R150T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HCA60R150T Datasheet (PDF)

 ..1. Size:281K  1
 hca60r150t.pdf

HCA60R150T HCA60R150T

Jan 2016HCA60R150T600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) XQg)BVDSS @Tj,max 650 V Extremely low switching lossID 22 A Excellent stability and uniformityRDS(on), max 0.15 100% Avalanche TestedQg, Typ 41 nCApplicationPackage & Internal Circuit Switch Mode Power Supply (SMPS)TO-247 Uninterruptib

 8.1. Size:1113K  1
 hca60r040.pdf

HCA60R150T HCA60R150T

 8.2. Size:406K  semihow
 hca60r290.pdf

HCA60R150T HCA60R150T

Dec 2020HCA60R290600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 12.9 A Excellent stability and uniformityRDS(on), max 0.29 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal CircuitTO-247 SYMBOL Swit

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCE50NF130K | IPI65R190CFD | FQD2P40 | MXP6006DF

 

 
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