HCA60R150T Specs and Replacement
Type Designator: HCA60R150T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 108 nS
Cossⓘ - Output Capacitance: 225 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO247
HCA60R150T substitution
- MOSFET ⓘ Cross-Reference Search
HCA60R150T datasheet
hca60r150t.pdf
Jan 2016 HCA60R150T 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) XQg) BVDSS @Tj,max 650 V Extremely low switching loss ID 22 A Excellent stability and uniformity RDS(on), max 0.15 100% Avalanche Tested Qg, Typ 41 nC Application Package & Internal Circuit Switch Mode Power Supply (SMPS) TO-247 Uninterruptib... See More ⇒
hca60r070f.pdf
July 2020 HCA60R070F 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 42 A Excellent stability and uniformity RDS(on), max 70 m 100% Avalanche Tested Fast Recovery Time Qg, Typ 106 nC Application Package & Internal Circuit TO-247 SYMBOL Swit... See More ⇒
hca60r290.pdf
Dec 2020 HCA60R290 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 12.9 A Excellent stability and uniformity RDS(on), max 0.29 100% Avalanche Tested Built-in ESD Diode Qg, Typ 27 nC Application Package & Internal Circuit TO-247 SYMBOL Swit... See More ⇒
Detailed specifications: HM4240, HM4260, HM4264, HM4264B, HM4302, HM4302B, 2SK68A, CRJF390N65GC, IRF1405, MDP10N027TH, NVHL055N60S5F, OSG60R074HZF, OSG60R074FZF, SRC60R078BTF, SRC60R078BT, SRC60R078BS2, STK0825F
Keywords - HCA60R150T MOSFET specs
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