STK0825F MOSFET. Datasheet pdf. Equivalent
Type Designator: STK0825F
Marking Code: STK0825
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 76 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220F
STK0825F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STK0825F Datasheet (PDF)
stk0825f.pdf
STK0825FSemiconductor Semiconductor Advanced Power MOSFETDC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features High Voltage: BVDSS=250V(Min.) Low Crss : Crss=13pF(Typ.) Low gate charge : Qg=15nC(Typ.) Low RDS(on) :RDS(on)=0.4(Max.) Ordering Information Type NO. Marking Package Code STK0825F STK0825 TO-220F-3LOutline Dimensio
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BUZ50B-220SM
History: BUZ50B-220SM
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918