HYG042N10NS1B MOSFET Datasheet: N-Ch, 100V, 160A. Full specification with pinout and replacement list

HYG042N10NS1B Specs and Replacement

   Type Designator: HYG042N10NS1B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 97 nS
   Cossⓘ - Output Capacitance: 2506 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO263

HYG042N10NS1B substitution

- MOSFET ⓘ Cross-Reference Search

HYG042N10NS1B datasheet

..1. Size:863K 1
hyg042n10ns1p hyg042n10ns1b.pdf pdf_icon

HYG042N10NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/160A RDS(ON)=3.5m (typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application DC-DC Converters N-Channel MOSFET Ordering and Marking Information ... See More ⇒

9.1. Size:1340K 1
hyg045n03la1c1.pdf pdf_icon

HYG045N03LA1C1 N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/50A RDS(ON)=3.9 m (typ.) @VGS = 10V RDS(ON)=5.2 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available Pin1 (RoHS Compliant) Applications Switching Application Battery Protection Single N-Channel MOSFET Ordering and Marking Info... See More ⇒

9.2. Size:1346K 1
hyg045n03la1c2.pdf pdf_icon

HYG045N03LA1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/78A D D D D D D D D RDS(ON)= 3.6 m (typ.) @VGS = 10V RDS(ON)= 4.8 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G PDFN8L(5x6) Applications Load Switch Lithium battery protect board Single N-Channel MOSFET O... See More ⇒

9.3. Size:1404K 1
hyg043n10ns2p hyg043n10ns2b.pdf pdf_icon

Microelectronics HYG043N10NS2P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/164A RDS(ON)= 3.5 m (typ.) @VGS = 10V 100% Avalanche Tested 100% DVDS G D S Reliable and Rugged D S G Halogen Free and Green Devices Available TO-220FB-3L TO-263-2L (RoHS Compliant) Applications Battery Management System Controller Sin... See More ⇒