SUB75N06-08 MOSFET Datasheet: N-Ch, 60V, 75A. Full specification with pinout and replacement list

SUB75N06-08 Specs and Replacement

   Type Designator: SUB75N06-08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 910 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263

SUB75N06-08 substitution

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SUB75N06-08 datasheet

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SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75a Continuous ... See More ⇒

..2. Size:73K vishay
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SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75... See More ⇒

4.1. Size:71K vishay
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SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY 175 C Rated Maximum Junction Temperature V(BR)DSS (V) rDS(on) ( )ID (A) Available 0.0075 at VGS = 10 V RoHS* 60 75a 0.0085 at VGS = 4.5 V COMPLIANT TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View G D S SUB75N06-07L Top View S SUP75N06-07L N-Channel MOSFET ... See More ⇒

4.2. Size:88K vishay
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