All MOSFET. FDMC4435BZ Datasheet

 

FDMC4435BZ Datasheet and Replacement


   Type Designator: FDMC4435BZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 46 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: POWER33
 

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FDMC4435BZ Datasheet (PDF)

 ..1. Size:368K  fairchild semi
 fdmc4435bz.pdf pdf_icon

FDMC4435BZ

September 2010FDMC4435BZP-Channel Power Trench MOSFET -30 V, -18 A, 20 m Features General Description Max rDS(on) = 20 m at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 37 m at VGS = -4.5 V, ID = -6.3 Abeen especially tailored to minimize the on-state resistance. This E

 ..2. Size:544K  onsemi
 fdmc4435bz.pdf pdf_icon

FDMC4435BZ

FDMC4435BZP-Channel Power Trench MOSFET-30 V, -18 A, 20 mGeneral DescriptionFeaturesThis P-Channel MOSFET is produced using ON Max rDS(on) = 20 m at VGS = -10 V, ID = -8.5 ASemiconductors advanced Power Trench process that has Max rDS(on) = 37 m at VGS = -4.5 V, ID = -6.3 Abeen especially tailored to minimize the on-state resistance. This device is well suited

Datasheet: FDMC2523P , FDMC2610 , STS2620 , FDMC2674 , FDMC3020DC , STS2601 , FDMC3612 , STS2309A , CS150N03A8 , FDMC510P , FDMC5614P , FDMC6296 , STS2308A , FDMC6675BZ , FDMC6679AZ , FDMC6890NZ , FDMC7570S .

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