FDMC4435BZ Datasheet. Specs and Replacement

Type Designator: FDMC4435BZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: POWER33

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FDMC4435BZ datasheet

 ..1. Size:368K  fairchild semi
 fdmc4435bz.pdf pdf_icon

FDMC4435BZ

September 2010 FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 m Features General Description Max rDS(on) = 20 m at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 37 m at VGS = -4.5 V, ID = -6.3 A been especially tailored to minimize the on-state resistance. This E... See More ⇒

 ..2. Size:544K  onsemi
 fdmc4435bz.pdf pdf_icon

FDMC4435BZ

FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 m General Description Features This P-Channel MOSFET is produced using ON Max rDS(on) = 20 m at VGS = -10 V, ID = -8.5 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 37 m at VGS = -4.5 V, ID = -6.3 A been especially tailored to minimize the on-state resistance. This device is well suited... See More ⇒

Detailed specifications: FDMC2523P, FDMC2610, STS2620, FDMC2674, FDMC3020DC, STS2601, FDMC3612, STS2309A, IRF520, FDMC510P, FDMC5614P, FDMC6296, STS2308A, FDMC6675BZ, FDMC6679AZ, FDMC6890NZ, FDMC7570S

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