FDMC510P Datasheet. Specs and Replacement

Type Designator: FDMC510P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: POWER33

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FDMC510P datasheet

 ..1. Size:307K  fairchild semi
 fdmc510p.pdf pdf_icon

FDMC510P

June 2010 FDMC510P P-Channel PowerTrench MOSFET -20 V, -18 A, 8.0 m Features General Description Max rDS(on) = 8.0 m at VGS = -4.5 V, ID = -12 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 9.8 m at VGS = -2.5 V, ID = -10 A been optimized for rDS(ON), switching performance and Max rDS(on) =... See More ⇒

 9.1. Size:506K  fairchild semi
 fdmc5614p.pdf pdf_icon

FDMC510P

September 2010 FDMC5614P tm P-Channel PowerTrench MOSFET -60V, -13.5A, 100m Features General Description Max rDS(on) = 100m at VGS = -10V, ID = -5.7A This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been Max rDS(on) = 135m at VGS = -4.5V, ID = -4.4A optimized for power management applications requiring a wi... See More ⇒

Detailed specifications: FDMC2610, STS2620, FDMC2674, FDMC3020DC, STS2601, FDMC3612, STS2309A, FDMC4435BZ, IRF2807, FDMC5614P, FDMC6296, STS2308A, FDMC6675BZ, FDMC6679AZ, FDMC6890NZ, FDMC7570S, FDMC7572S

Keywords - FDMC510P MOSFET specs

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