All MOSFET. HM4468T Datasheet

 

HM4468T Datasheet and Replacement


   Type Designator: HM4468T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 290 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 29.4 nS
   Cossⓘ - Output Capacitance: 1352 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: TO247
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HM4468T Datasheet (PDF)

 ..1. Size:622K  cn hmsemi
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HM4468T

HM4468TN-Channel Enhancement Mode Power MOSFET Description The HM4468T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features VDSS =100V,ID =290A RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FKG1020 | SML601R3AN | FDS86252 | AP60T03GH | IXTA220N075T7 | HCS60R260ST | HMS8N65D

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