HM4490 Specs and Replacement
Type Designator: HM4490
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 163 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm
Package: SOP8
HM4490 substitution
- MOSFET ⓘ Cross-Reference Search
HM4490 datasheet
hm4490.pdf
HM4490 N-Channel Enhancement Mode Power MOSFET Description The HM4490 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =3.9A RDS(ON) ... See More ⇒
Detailed specifications: HM4485A, HM4485B, HM4486A, HM4486E, HM4487, HM4487A, HM4487B, HM4488, 13N50, HM4503, HM45N02D, HM45N02Q, HM45N06D, HM45P02D, HM45P02Q, HM45P03K, HM4606
Keywords - HM4490 MOSFET specs
HM4490 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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