HM4490 Datasheet and Replacement
Type Designator: HM4490
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 163 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm
Package: SOP8
HM4490 substitution
HM4490 Datasheet (PDF)
hm4490.pdf

HM4490N-Channel Enhancement Mode Power MOSFET Description The HM4490 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =3.9A RDS(ON)
Datasheet: HM4485A , HM4485B , HM4486A , HM4486E , HM4487 , HM4487A , HM4487B , HM4488 , TK10A60D , HM4503 , HM45N02D , HM45N02Q , HM45N06D , HM45P02D , HM45P02Q , HM45P03K , HM4606 .
History: UT3404 | SWB076R68E7T | SML1248PC2A | NCEP025N60AG | NTMFS6H801NL | TSM1NB60CW | SH8M13
Keywords - HM4490 MOSFET datasheet
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History: UT3404 | SWB076R68E7T | SML1248PC2A | NCEP025N60AG | NTMFS6H801NL | TSM1NB60CW | SH8M13



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