All MOSFET. HM4490 Datasheet

 

HM4490 Datasheet and Replacement


   Type Designator: HM4490
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm
   Package: SOP8
 

 HM4490 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HM4490 Datasheet (PDF)

 ..1. Size:630K  cn hmsemi
 hm4490.pdf pdf_icon

HM4490

HM4490N-Channel Enhancement Mode Power MOSFET Description The HM4490 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =3.9A RDS(ON)

Datasheet: HM4485A , HM4485B , HM4486A , HM4486E , HM4487 , HM4487A , HM4487B , HM4488 , TK10A60D , HM4503 , HM45N02D , HM45N02Q , HM45N06D , HM45P02D , HM45P02Q , HM45P03K , HM4606 .

History: BUK7Y1R4-40H

Keywords - HM4490 MOSFET datasheet

 HM4490 cross reference
 HM4490 equivalent finder
 HM4490 lookup
 HM4490 substitution
 HM4490 replacement

 

 
Back to Top

 


 
.