HM4813 MOSFET Datasheet: P-Ch, 30V, 7A. Full specification with pinout and replacement list

HM4813 Specs and Replacement

Type Designator: HM4813

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: SOP8

HM4813 substitution

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HM4813 datasheet

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HM4813 Dual P-Channel Enhancement Mode Power MOSFET Description D1 D2 The HM4813 uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2 Schematic diagram General Features VDS = -30V,ID = -7A RDS(ON) ... See More ⇒

9.1. Size:511K cn hmsemi
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HM4812 Dual N-Channel Enhancement Mode Power MOSFET Description The HM4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Schematic diagram Genera Features VDS = 30V,ID = 7A RDS(ON) ... See More ⇒

Detailed specifications: HM4630D, HM4803, HM4805A, HM4805B, HM4806A, HM4806B, HM4806C, HM4812, STP65NF06, HM4821, HM4822, HM4822B, HM4826, HM4826A, HM4828, HM4828A, HM4830