All MOSFET. HM4813 Datasheet

 

HM4813 Datasheet and Replacement


   Type Designator: HM4813
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SOP8
 

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HM4813 Datasheet (PDF)

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HM4813

HM4813Dual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4813 uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram General Features VDS = -30V,ID = -7A RDS(ON)

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HM4813

HM4812Dual N-Channel Enhancement Mode Power MOSFET Description The HM4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Schematic diagram Genera Features VDS = 30V,ID = 7A RDS(ON)

Datasheet: HM4630D , HM4803 , HM4805A , HM4805B , HM4806A , HM4806B , HM4806C , HM4812 , IRFZ48N , HM4821 , HM4822 , HM4822B , HM4826 , HM4826A , HM4828 , HM4828A , HM4830 .

History: SQD25N06-22L | FDBL0150N80 | STS5PF20V | IPB50R250CP

Keywords - HM4813 MOSFET datasheet

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