HM4830 Datasheet and Replacement
Type Designator: HM4830
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 460 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: SOP8
HM4830 substitution
HM4830 Datasheet (PDF)
hm4830.pdf
HM4830Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4830 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =18A Schematic diagram RDS(ON)
Datasheet: HM4813 , HM4821 , HM4822 , HM4822B , HM4826 , HM4826A , HM4828 , HM4828A , IRFB7545 , HM4840 , HM4843 , HM4853 , HM4853A , HM4853B , HM4884 , HM4884A , HM4885 .
History: NTLJS2103PTBG | NTLJS1102PTBG | LSG60R290HF | LSG60R380HT | 2SK2915 | WM03P27M | LSG50R160HT
Keywords - HM4830 MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: NTLJS2103PTBG | NTLJS1102PTBG | LSG60R290HF | LSG60R380HT | 2SK2915 | WM03P27M | LSG50R160HT
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