HM4830 MOSFET. Datasheet pdf. Equivalent
Type Designator: HM4830
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 41 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 460 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: SOP8
HM4830 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM4830 Datasheet (PDF)
..1. Size:510K cn hmsemi
hm4830.pdf
hm4830.pdf
HM4830Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4830 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =18A Schematic diagram RDS(ON)
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