All MOSFET. HM4830 Datasheet

 

HM4830 Datasheet and Replacement


   Type Designator: HM4830
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 41 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: SOP8
 

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HM4830 Datasheet (PDF)

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HM4830

HM4830Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4830 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =18A Schematic diagram RDS(ON)

Datasheet: HM4813 , HM4821 , HM4822 , HM4822B , HM4826 , HM4826A , HM4828 , HM4828A , 8N60 , HM4840 , HM4843 , HM4853 , HM4853A , HM4853B , HM4884 , HM4884A , HM4885 .

Keywords - HM4830 MOSFET datasheet

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