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HM4830 Specs and Replacement

Type Designator: HM4830

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: SOP8

HM4830 substitution

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HM4830 datasheet

 ..1. Size:510K  cn hmsemi
 hm4830.pdf pdf_icon

HM4830

HM4830 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4830 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =18A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: HM4813, HM4821, HM4822, HM4822B, HM4826, HM4826A, HM4828, HM4828A, IRFB7545, HM4840, HM4843, HM4853, HM4853A, HM4853B, HM4884, HM4884A, HM4885

Keywords - HM4830 MOSFET specs

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