All MOSFET. HM4843 Datasheet

 

HM4843 Datasheet and Replacement


   Type Designator: HM4843
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 14 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOP8
 

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HM4843 Datasheet (PDF)

 ..1. Size:730K  cn hmsemi
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HM4843

HM4843Dual P-Channel Enhancement Mode Power MOSFET D1D2Description The HM4843 uses advanced trench technology to G1 G2provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. S1 S2Schematic diagram General Features VDS = -40V,ID = -5.0A RDS(ON)

 9.1. Size:932K  cn hmsemi
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HM4843

HM4840Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4840 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES Schematic diagram VDS =40V,ID =7.0A RDS(ON)

Datasheet: HM4822 , HM4822B , HM4826 , HM4826A , HM4828 , HM4828A , HM4830 , HM4840 , IRF9640 , HM4853 , HM4853A , HM4853B , HM4884 , HM4884A , HM4885 , HM4885A , HM4886A .

History: BSZ014NE2LS5IF

Keywords - HM4843 MOSFET datasheet

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