All MOSFET. HM4843 Datasheet

 

HM4843 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM4843
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOP8

 HM4843 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM4843 Datasheet (PDF)

 ..1. Size:730K  cn hmsemi
 hm4843.pdf

HM4843 HM4843

HM4843Dual P-Channel Enhancement Mode Power MOSFET D1D2Description The HM4843 uses advanced trench technology to G1 G2provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. S1 S2Schematic diagram General Features VDS = -40V,ID = -5.0A RDS(ON)

 9.1. Size:932K  cn hmsemi
 hm4840.pdf

HM4843 HM4843

HM4840Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4840 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES Schematic diagram VDS =40V,ID =7.0A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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