HM4843 PDF and Equivalents Search

 

HM4843 Specs and Replacement

Type Designator: HM4843

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOP8

HM4843 substitution

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HM4843 datasheet

 ..1. Size:730K  cn hmsemi
hm4843.pdf pdf_icon

HM4843

HM4843 Dual P-Channel Enhancement Mode Power MOSFET D1 D2 Description The HM4843 uses advanced trench technology to G1 G2 provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. S1 S2 Schematic diagram General Features VDS = -40V,ID = -5.0A RDS(ON) ... See More ⇒

 9.1. Size:932K  cn hmsemi
hm4840.pdf pdf_icon

HM4843

HM4840 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4840 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES Schematic diagram VDS =40V,ID =7.0A RDS(ON) ... See More ⇒

Detailed specifications: HM4822, HM4822B, HM4826, HM4826A, HM4828, HM4828A, HM4830, HM4840, K2611, HM4853, HM4853A, HM4853B, HM4884, HM4884A, HM4885, HM4885A, HM4886A

Keywords - HM4843 MOSFET specs

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