HM4843 Specs and Replacement
Type Designator: HM4843
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SOP8
HM4843 substitution
- MOSFET ⓘ Cross-Reference Search
HM4843 datasheet
hm4843.pdf
HM4843 Dual P-Channel Enhancement Mode Power MOSFET D1 D2 Description The HM4843 uses advanced trench technology to G1 G2 provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. S1 S2 Schematic diagram General Features VDS = -40V,ID = -5.0A RDS(ON) ... See More ⇒
hm4840.pdf
HM4840 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4840 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES Schematic diagram VDS =40V,ID =7.0A RDS(ON) ... See More ⇒
Detailed specifications: HM4822, HM4822B, HM4826, HM4826A, HM4828, HM4828A, HM4830, HM4840, K2611, HM4853, HM4853A, HM4853B, HM4884, HM4884A, HM4885, HM4885A, HM4886A
Keywords - HM4843 MOSFET specs
HM4843 cross reference
HM4843 equivalent finder
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