HM4963 MOSFET. Datasheet pdf. Equivalent
Type Designator: HM4963
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 450 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: SOP8
HM4963 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM4963 Datasheet (PDF)
hm4963.pdf
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HM4963Dual P-Channel Enhancement Mode Power MOSFET D1D2Description The HM4963 uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S1 S2load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -7A RDS(ON)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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