All MOSFET. HM4963 Datasheet

 

HM4963 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM4963
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SOP8

 HM4963 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM4963 Datasheet (PDF)

 ..1. Size:755K  cn hmsemi
 hm4963.pdf

HM4963 HM4963

HM4963Dual P-Channel Enhancement Mode Power MOSFET D1D2Description The HM4963 uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S1 S2load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -7A RDS(ON)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: RU1H36R | 2N6903 | IRFS840 | IRF7103PBF | ZXMN6A25DN8

 

 
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