HM4963 Specs and Replacement
Type Designator: HM4963
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 450 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: SOP8
HM4963 substitution
- MOSFET ⓘ Cross-Reference Search
HM4963 datasheet
hm4963.pdf
HM4963 Dual P-Channel Enhancement Mode Power MOSFET D1 D2 Description The HM4963 uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S1 S2 load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -7A RDS(ON) ... See More ⇒
Detailed specifications: HM4892A, HM4892B, HM4922, HM4953, HM4953A, HM4953B, HM4953C, HM4953D, IRFZ44, HM4N10PR, HM4N150T, HM4N60, HM4N60F, HM4N60I, HM4N60K, HM4N65, HM4N65F
Keywords - HM4963 MOSFET specs
HM4963 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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