HM4N10PR Specs and Replacement
Type Designator: HM4N10PR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 24 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: SOT89
HM4N10PR substitution
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HM4N10PR datasheet
hm4n10pr.pdf
HM4N10PR N-Channel Enhancement Mode Power MOSFET Description The HM4N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 4A RDS(ON) ... See More ⇒
hm4n150t.pdf
HM4N150T N-Channel MOSFET Features 1500V,4A,Rds(on) ... See More ⇒
Detailed specifications: HM4892B, HM4922, HM4953, HM4953A, HM4953B, HM4953C, HM4953D, HM4963, IRF640, HM4N150T, HM4N60, HM4N60F, HM4N60I, HM4N60K, HM4N65, HM4N65F, HM4N65I
Keywords - HM4N10PR MOSFET specs
HM4N10PR cross reference
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