All MOSFET. HM4N10PR Datasheet

 

HM4N10PR Datasheet and Replacement


   Type Designator: HM4N10PR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 24 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SOT89
 

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HM4N10PR Datasheet (PDF)

 ..1. Size:611K  cn hmsemi
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HM4N10PR

HM4N10PRN-Channel Enhancement Mode Power MOSFET Description The HM4N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 4A RDS(ON)

 9.1. Size:724K  cn hmsemi
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HM4N10PR

HM4N150TN-Channel MOSFET Features 1500V,4A,Rds(on)

Datasheet: HM4892B , HM4922 , HM4953 , HM4953A , HM4953B , HM4953C , HM4953D , HM4963 , IRFP460 , HM4N150T , HM4N60 , HM4N60F , HM4N60I , HM4N60K , HM4N65 , HM4N65F , HM4N65I .

History: IRFH5020PBF

Keywords - HM4N10PR MOSFET datasheet

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