All MOSFET. HM4N10PR Datasheet

 

HM4N10PR MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM4N10PR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 24 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SOT89

 HM4N10PR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM4N10PR Datasheet (PDF)

 ..1. Size:611K  cn hmsemi
 hm4n10pr.pdf

HM4N10PR HM4N10PR

HM4N10PRN-Channel Enhancement Mode Power MOSFET Description The HM4N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 4A RDS(ON)

 9.1. Size:724K  cn hmsemi
 hm4n150t.pdf

HM4N10PR HM4N10PR

HM4N150TN-Channel MOSFET Features 1500V,4A,Rds(on)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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