HM4N90I PDF and Equivalents Search

 

HM4N90I Specs and Replacement

Type Designator: HM4N90I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO251

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HM4N90I datasheet

 ..1. Size:416K  cn hmsemi
 hm4n90i.pdf pdf_icon

HM4N90I

HM4N90I General Description VDSS 900 V HM4N90I, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization ... See More ⇒

Detailed specifications: HM4N60I, HM4N60K, HM4N65, HM4N65F, HM4N65I, HM4N65K, HM4N65R, HM4N70F, 2N7000, HM5001, HM50N03, HM50N03I, HM50N03K, HM50N06, HM50N06A, HM50N06D, HM50N06I

Keywords - HM4N90I MOSFET specs

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