All MOSFET. HM4N90I Datasheet

 

HM4N90I Datasheet and Replacement


   Type Designator: HM4N90I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 25.2 nC
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO251
 

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HM4N90I Datasheet (PDF)

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HM4N90I

HM4N90I General Description VDSS 900 V HM4N90I, the silicon N-channel Enhanced ID 4 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization

Datasheet: HM4N60I , HM4N60K , HM4N65 , HM4N65F , HM4N65I , HM4N65K , HM4N65R , HM4N70F , IRF9540 , HM5001 , HM50N03 , HM50N03I , HM50N03K , HM50N06 , HM50N06A , HM50N06D , HM50N06I .

History: IXTP32N65XM | 2SK3510-S

Keywords - HM4N90I MOSFET datasheet

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