All MOSFET. HM530 Datasheet

 

HM530 Datasheet and Replacement


   Type Designator: HM530
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.3 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO220
 

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HM530 Datasheet (PDF)

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HM530

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =100V,ID =17A RDS(ON)

Datasheet: HM50N20 , HM50N20D , HM50P02K , HM50P03 , HM50P03D , HM50P03K , HM50P06 , HM50P06K , 4435 , HM55N03D , HM5853 , HM5N06AR , HM5N06PR , HM5N06R , HM5N20I , HM5N20R , HM5N30K .

History: APT38N60SC6 | NCE60N670K

Keywords - HM530 MOSFET datasheet

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