HM530 Specs and Replacement

Type Designator: HM530

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.3 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO220

HM530 substitution

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HM530 datasheet

 ..1. Size:462K  cn hmsemi
 hm530.pdf pdf_icon

HM530

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =100V,ID =17A RDS(ON) ... See More ⇒

Detailed specifications: HM50N20, HM50N20D, HM50P02K, HM50P03, HM50P03D, HM50P03K, HM50P06, HM50P06K, 5N65, HM55N03D, HM5853, HM5N06AR, HM5N06PR, HM5N06R, HM5N20I, HM5N20R, HM5N30K

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