All MOSFET. HM55N03D Datasheet

 

HM55N03D Datasheet and Replacement


   Type Designator: HM55N03D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DFN5X6-8L
 

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HM55N03D Datasheet (PDF)

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HM55N03D

HM55N03DN-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =55A RDS(ON)

Datasheet: HM50N20D , HM50P02K , HM50P03 , HM50P03D , HM50P03K , HM50P06 , HM50P06K , HM530 , IRF1010E , HM5853 , HM5N06AR , HM5N06PR , HM5N06R , HM5N20I , HM5N20R , HM5N30K , HM5N30PR .

History: HM50P06K | HM50P03 | HM530 | HM50P03K | BSS84AK | AP2302 | BSS138P

Keywords - HM55N03D MOSFET datasheet

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