HM55N03D Specs and Replacement

Type Designator: HM55N03D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 1350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: DFN5X6-8L

HM55N03D substitution

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HM55N03D datasheet

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HM55N03D

HM55N03D N-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =55A RDS(ON) ... See More ⇒

Detailed specifications: HM50N20D, HM50P02K, HM50P03, HM50P03D, HM50P03K, HM50P06, HM50P06K, HM530, IRF1010E, HM5853, HM5N06AR, HM5N06PR, HM5N06R, HM5N20I, HM5N20R, HM5N30K, HM5N30PR

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.