HM55N03D Datasheet and Replacement
Type Designator: HM55N03D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 1350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: DFN5X6-8L
HM55N03D substitution
HM55N03D Datasheet (PDF)
hm55n03d.pdf
HM55N03DN-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =55A RDS(ON)
Datasheet: HM50N20D , HM50P02K , HM50P03 , HM50P03D , HM50P03K , HM50P06 , HM50P06K , HM530 , IRF530 , HM5853 , HM5N06AR , HM5N06PR , HM5N06R , HM5N20I , HM5N20R , HM5N30K , HM5N30PR .
History: AP60T03AJ | 2SK578 | NCE70T540 | GSM6424 | NCE70N900I | CS5N65A3 | TPCA8008-H
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History: AP60T03AJ | 2SK578 | NCE70T540 | GSM6424 | NCE70N900I | CS5N65A3 | TPCA8008-H
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