All MOSFET. HM5853 Datasheet

 

HM5853 Datasheet and Replacement


   Type Designator: HM5853
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 22 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: DFN2X3-8L
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HM5853 Datasheet (PDF)

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HM5853

5853 Power MOSFET and Schottky Diode General Description The 5853 uses advanced trench technology to provide MOSFET excellent RDSON and low gate charge. Featuring a MOSFET V(BR)DSS RDS(ON) TYP ID MAX and Schottky Diode, Independent Pin out to each Device to 79m@-4.5V -22V -3A Ease Circuit Design. 110m@-2.5V SHOTTKY DIODE Features VR MAX VF TYP IF MAX Lea

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History: KXU05N25 | HLML6401 | NTMFS5C468NLT1G | NVD4810N | GKI04048 | DMN2320UFB4 | AP85T03GH-HF

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