All MOSFET. HM5853 Datasheet

 

HM5853 Datasheet and Replacement


   Type Designator: HM5853
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 22 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: DFN2X3-8L
 

 HM5853 substitution

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HM5853 Datasheet (PDF)

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HM5853

5853 Power MOSFET and Schottky Diode General Description The 5853 uses advanced trench technology to provide MOSFET excellent RDSON and low gate charge. Featuring a MOSFET V(BR)DSS RDS(ON) TYP ID MAX and Schottky Diode, Independent Pin out to each Device to 79m@-4.5V -22V -3A Ease Circuit Design. 110m@-2.5V SHOTTKY DIODE Features VR MAX VF TYP IF MAX Lea

Datasheet: HM50P02K , HM50P03 , HM50P03D , HM50P03K , HM50P06 , HM50P06K , HM530 , HM55N03D , AON7506 , HM5N06AR , HM5N06PR , HM5N06R , HM5N20I , HM5N20R , HM5N30K , HM5N30PR , HM5N30R .

History: IRF7210TR | RJK0226DNS | VBZE7843 | 2SK3438 | AOTF160A60L | IRFB4110 | AM90N03-04D

Keywords - HM5853 MOSFET datasheet

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