HM5853 Specs and Replacement

Type Designator: HM5853

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 22 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm

Package: DFN2X3-8L

HM5853 substitution

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HM5853 datasheet

 ..1. Size:386K  cn hmsemi
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HM5853

5853 Power MOSFET and Schottky Diode General Description The 5853 uses advanced trench technology to provide MOSFET excellent RDSON and low gate charge. Featuring a MOSFET V(BR)DSS RDS(ON) TYP ID MAX and Schottky Diode, Independent Pin out to each Device to 79m @-4.5V -22V -3A Ease Circuit Design. 110m @-2.5V SHOTTKY DIODE Features VR MAX VF TYP IF MAX Lea... See More ⇒

Detailed specifications: HM50P02K, HM50P03, HM50P03D, HM50P03K, HM50P06, HM50P06K, HM530, HM55N03D, IRFB3607, HM5N06AR, HM5N06PR, HM5N06R, HM5N20I, HM5N20R, HM5N30K, HM5N30PR, HM5N30R

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.