HM5N20R Specs and Replacement

Type Designator: HM5N20R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: SOT223

HM5N20R substitution

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HM5N20R datasheet

 ..1. Size:1153K  cn hmsemi
 hm5n20r.pdf pdf_icon

HM5N20R

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 8.1. Size:440K  cn hmsemi
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HM5N20R

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 200V,ID =5A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: HM50P06K, HM530, HM55N03D, HM5853, HM5N06AR, HM5N06PR, HM5N06R, HM5N20I, AON7506, HM5N30K, HM5N30PR, HM5N30R, HM5N50I, HM5N50K, HM5N60, HM5N60F, HM5N60I

Keywords - HM5N20R MOSFET specs

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