HM5N30R MOSFET. Datasheet pdf. Equivalent
Type Designator: HM5N30R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.2 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 21 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: SOT223
HM5N30R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM5N30R Datasheet (PDF)
hm5n30r.pdf
HM5N30R Silicon N-Channel Power MOSFETGeneral Description VDSS 300 V HM5N30R, the silicon N-channel Enhanced ID 5 A PD (TC=25) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circ
hm5n30pr.pdf
HM5N30PR Silicon N-Channel Power MOSFETGeneral Description VDSS 300 V HM5N30PR, the silicon N-channel Enhanced ID 5 A PD (TC=25) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching ci
hm5n30k.pdf
300V N-Channel Enhancement Mode MOSFET Description The is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficien
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
