HM5N30R Specs and Replacement
Type Designator: HM5N30R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 21 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: SOT223
HM5N30R substitution
- MOSFET ⓘ Cross-Reference Search
HM5N30R datasheet
hm5n30r.pdf
HM5N30R Silicon N-Channel Power MOSFET General Description VDSS 300 V HM5N30R, the silicon N-channel Enhanced ID 5 A PD (TC=25 ) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circ... See More ⇒
hm5n30pr.pdf
HM5N30PR Silicon N-Channel Power MOSFET General Description VDSS 300 V HM5N30PR, the silicon N-channel Enhanced ID 5 A PD (TC=25 ) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching ci... See More ⇒
hm5n30k.pdf
300V N-Channel Enhancement Mode MOSFET Description The is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficien... See More ⇒
Detailed specifications: HM5853, HM5N06AR, HM5N06PR, HM5N06R, HM5N20I, HM5N20R, HM5N30K, HM5N30PR, TK10A60D, HM5N50I, HM5N50K, HM5N60, HM5N60F, HM5N60I, HM5N60K, HM5N65, HM5N65F
Keywords - HM5N30R MOSFET specs
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