HM6005A Datasheet and Replacement
Type Designator: HM6005A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOT23-6
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HM6005A Datasheet (PDF)
hm6005a.pdf

HM6005AN-Channel Enhancement Mode Power MOSFET Description The HM6005A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=60V,ID=5A Schematic diagram RDS(ON)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: TWE3139K | KP103M | STD4NK60ZT4 | IPD135N08N3 | AP30N30W | 2SK2845 | KNB1906A
Keywords - HM6005A MOSFET datasheet
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History: TWE3139K | KP103M | STD4NK60ZT4 | IPD135N08N3 | AP30N30W | 2SK2845 | KNB1906A



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